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Número de pieza | 4AK17 | |
Descripción | Silicon N-Channel Power MOS FET Array | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 4AK17 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.045 , VGS = 10 V, ID = 10 A
RDS(on) ≤ 0.065 , VGS = 4 V, ID = 10 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
1 page Typical Transfer Characteristics
50
75°C
40
VDS = 10 V
Pulse Test
TC= 25°C
–25°C
30
20
10
0 1 2 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
VGS = 4 V
0.1
0.05 10 V
0.02
0.01
0.005
1
2 5 10 20 50 100
Drain Current ID (A)
4AK17
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2 ID = 50 A
1 20 A
10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
ID = 20 A
0.08 10 A
0.06
VGS = 4 V
0.04
0.02
VGS = 10 V
20 A 5 A
10 A
5A
0
–40 0 40 80 120 160
Case Temperature TC (°C)
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 4AK17.PDF ] |
Número de pieza | Descripción | Fabricantes |
4AK15 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK16 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK17 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK18 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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