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Número de pieza | HY62CT08081E | |
Descripción | 32Kx8bit CMOS SRAM | |
Fabricantes | Hynix Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HY62CT08081E (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! HY62CT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No History
00 Initial
01 Marking Information Add
Revised
- DC / AC Characteristics
- AC Test Condition Add : 5pF Test Load
02 Revised
- Remove L-Part
- Change LL-Part Isb1 Limit @E.T/I.T
: 15uA => 20uA
03 Revised
- Marking Information Change : SOP Type
04 Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
Draft Date Remark
Nov.01.2000 Preliminary
Dec.05.2000 Preliminary
Feb.13.2001 Final
Feb.21.2001 Final
Apr.30.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 04 / Apr. 2001
Hynix Semiconductor
1 page HY62CT08081E Series
AC CHARACTERISTICS
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
# Symbol
Parameter
-55 -70 -85
Min. Max. Min. Max. Min Max.
READ CYCLE
1 tRC Read Cycle Time
55 - 70 - 85 -
2 tAA
Address Access Time
- 55 - 70 - 85
3 tACS Chip Select Access Time
- 55 - 70 - 85
4 tOE Output Enable to Output Valid
- 25 - 35 - 45
5 tCLZ Chip Select to Output in Low Z
10 - 10 - 10 -
6 tOLZ Output Enable to Output in Low Z
5-5-5-
7 tCHZ Chip Disable to Output in High Z
0 20 0 30 0 30
8 tOHZ Out Disable to Output in High Z
0 20 0 30 0 30
9 tOH Output Hold from Address Change
5-5-5-
WRITE CYCLE
10 tWC Write Cycle Time
55 - 70 - 85 -
11 tCW Chip Selection to End of Write
45 - 60 - 75 -
12 tAW Address Valid to End of Write
45 - 60 - 75 -
13 tAS
Address Set-up Time
0-0-0-
14 tWP Write Pulse Width
40 - 50 - 60 -
15 tWR Write Recovery Time
0-0-0-
16 tWHZ Write to Output in High Z
0 20 0 25 0 30
17 tDW Data to Write Time Overlap
25 - 30 - 40 -
18 tDH Data Hold from Write Time
0-0-0-
19 tOW Output Active from End of Write
5-5-5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial)
unless otherwise specified.
Parameter
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
Rev 04 / Apr. 2001
4
5 Page 28pin 8x13.4mm Thin Small Outline Package Standard(T)
0.468(11.9)
0.460(11.7)
0.536(13.6)
0.520(13.2)
0.027(0.7)
0.012(0.3)
0.008(0.2)
0.004(0.1)
HY62CT08081E Series
UNIT
:
INCH(mm)
MAX.
MIN.
0.319(8.1)
0.311(7.9)
0.040(1.02)
0.036(0.91)
0.008(0.20)
0.002(0.05)
0.022(0.55 BSC)
Rev 04 / Apr. 2001
10
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet HY62CT08081E.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY62CT08081E | 32Kx8bit CMOS SRAM | Hynix Semiconductor |
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HY62CT08081E-DGE | 32Kx8bit CMOS SRAM | Hynix Semiconductor |
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