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Número de pieza | HY62SF16101C | |
Descripción | HY62SF16101C Series 64Kx16bit full CMOS SRAM | |
Fabricantes | Hynix Semiconductor | |
Logotipo | ||
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No Preview Available ! HY62SF16101C Series
64Kx16bit full CMOS SRAM
Document Title
64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM
Revision History
Revision No History
03 Divide output load into a couple of factors
- tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
- Others
Add marking information
04 Change AC Characteristic
- tBLZ
Draft Date
Remark
Dec.16. 2000 Final
Mar.24. 2002 Final
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Mar. 02
Hynix Semiconductor
1 page HY62SF16101C Series
AC CHARACTERISTICS
Vcc = 1.7~2.3V, TA = 0°C to 70°C / -40°C to 85°C (I) , unless otherwise specified
# Symbol
Parameter
-85 -10
Min. Max. Min. Max.
READ CYCLE
1 tRC Read Cycle Time
85 - 100 -
2 tAA
Address Access Time
- 85 - 100
3 tACS Chip Select Access Time
- 85 - 100
4 tOE Output Enable to Output Valid
- 40 - 45
5 tBA
/LB, /UB Access Time
- 85 - 100
6 tCLZ Chip Select to Output in Low Z
10 - 20 -
7 tOLZ Output Enable to Output in Low Z
5-5-
8 tBLZ /LB, /UB Enable to Output in Low Z
10 - 10 -
9 tCHZ Chip Deselection to Output in High Z
0 30 0 30
10 tOHZ Out Disable to Output in High Z
0 30 0 30
11 tBHZ /LB, /UB Disable to Output in High Z
0 30 0 30
12 tOH Output Hold from Address Change
10 - 15 -
WRITE CYCLE
13 tWC Write Cycle Time
85 - 100 -
14 tCW Chip Selection to End of Write
70 - 80 -
15 tAW Address Valid to End of Write
70 - 80 -
16 tBW /LB, /UB Valid to End of Write
70 - 80 -
17 tAS
Address Set-up Time
0-0-
18 tWP Write Pulse Width
55 - 75 -
19 tWR Write Recovery Time
0-0-
20 tWHZ Write to Output in High Z
0 30 0 35
21 tDW Data to Write Time Overlap
35 - 45 -
22 tDH Data Hold from Write Time
0-0-
23 tOW Output Active from End of Write
5 - 10 -
-12
Min Max.
120 -
- 120
- 120
- 50
- 120
20 -
10 -
20 -
0 40
0 40
0 40
15 -
120 -
100 -
100 -
100 -
0-
85 -
0-
0 40
50 -
0-
10 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Others
Value
0.4V to 1.6V
5ns
0.9V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM=1.8V
DOUT
4091 Ohm
CL(1)
3273 Ohm
Note
1. Including jig and scope capacitance
Rev.04 /Mar. 02
4
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HY62SF16101C.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY62SF16101C | HY62SF16101C Series 64Kx16bit full CMOS SRAM | Hynix Semiconductor |
HY62SF16101C1 | HY62SF16101C Series 64Kx16bit full CMOS SRAM | Hynix Semiconductor |
HY62SF16101CLLF | HY62SF16101C Series 64Kx16bit full CMOS SRAM | Hynix Semiconductor |
HY62SF16101CLLF | HY62SF16101C Series 64Kx16bit full CMOS SRAM | Hynix Semiconductor |
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