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ELH0032G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ELH0032G
기능 Fast Operational Amplifier
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ELH0032G 데이터시트, 핀배열, 회로
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Features
 500 V ms slew rate
 70 MHz bandwidth
 1012X input impedance
 5 mV max input offset voltage
 FET input
 Offset nulls with single pot
 No compensation required for
gains above 50
 Peak output current to 100 mA
 MIL-STD-883 devices 100%
manufactured in U S A
Ordering Information
Part No
Temp Range Pkg Outline
ELH0032G 883B b55 C to a125 C TO-8 MDP0002
8001301ZX is the SMD version of this device
Connection Diagram
General Description
The ELH0032 is a high slew rate high input impedance differ-
ential operational amplifier suitable for diverse application in
fast signal handling The high allowable differential input volt-
age ease of output clamping and high output drive capability
make the ELH0032 particularly suitable for comparator appli-
cations It may be used in applications normally reserved for
video amplifiers allowing the use of operational gain setting and
frequency response shaping into the megahertz region
The ELH0032’s wide bandwidth high input impedance and
high output drive capability make it an ideal choice for applica-
tions such as summing amplifiers in high-speed D to A’s buff-
ers in data acquisition systems and sample and hold circuits
Additional applications include high-speed integrators and vid-
eo amplifiers The ELH0032 is guaranteed over the temperature
range b55 C to a125 C
Elantec facilities comply with MIL-I-45208A and other applica-
ble quality specifications Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled ultra-clean
facilities in Milpitas California For additional information on
Elantec’s Quality and Reliability Assurance policy and proce-
dures request brochure QRA-1
Simplified Schematic
Top View
Case is electrically isolated
0032 – 1
0032 – 2
Manufactured under U S Patent No 4 746 877
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
CMS 0032DS
1986 Elantec Inc




ELH0032G pdf, 반도체, 판매, 대치품
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Typical Performance Curves
Maximum Power
Dissipation
Supply Current vs
Supply Voltage
Input Voltage Range
and Output Voltage
vs Supply Voltage
Bode Plot
(Uncompensated)
Bode Plot (Unity
Gain Compensation)
Large Signal
Frequency Response
0032 – 3
4

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ELH0032G 전자부품, 판매, 대치품
ELH0032G 883 8001301ZX
Fast Operational Amplifier
Applications Information
Power Supply Decoupling
The ELH0032 like most high-speed circuits is
sensitive to layout and stray capacitance Power
supplies should be bypassed as near to pins 10
and 12 as possible with low inductance capacitors
such as 0 01 mF disc ceramics Compensation
components should also be located close to the
appropriate pins to minimize stray reactances
Input Current
Because the input devices are FETs the input
bias current may be expected to double for each
11 C junction temperature rise This characteris-
tic is plotted in the typical performance charac-
teristics graphs The device will self-heat due to
internal power dissipation after application of
power thus raising the FET junction tempera-
ture 40 C – 60 C above the free-air ambient tem-
perature when supplies are g15V The device
temperature will stabilize within 5 –10 minutes
after application of power and the input bias cur-
rents measured at the time will be indicative of
normal operating currents An additional rise will
occur as power is delivered to a load due to addi-
tional internal power dissipation
There is an additional effect on input bias current
as the input voltage is changed The effect com-
mon to all FETs is an avalance-like increase in
gate current as the FET gate-to-drain voltage is
increased above a critical value depending on
FET geometry and doping levels This effect will
be noted as the input voltage of the ELH0032 is
taken below ground potential when the supplies
are g15V All of the effects described here may
be minimized by operating the device with VS s
g15V
These effects are indicated in the typical per-
formance curves
Input Capacitance
The input capacitance to the ELH0032 is typical-
ly 5 pF and thus may form a significant time
constant with high value resistors For optimum
performance the input capacitance to the invert-
ing input should be compensated by a small ca-
pacitor across the feedback resistor The value is
strongly dependent on layout and closed loop
gain but will typically be in the neighborhood of
several picofarads
In the non-inverting configuration it may be ad-
vantageous to bootstrap the case and or a guard
conductor to the inverting input This serves
both to divert leakage currents away from the
non-inverting input and to reduce the effective
input capacitance A unity gain follower so treat-
ed will have an input capacitance under a 1 pF
Heatsinking
While the ELH0032 is specified for operation
without any explicit heatsink internal power dis-
sipation does cause a significant temperature rise
Improved bias current performance can thus be
obtained by limiting this temperature rise with a
small heat sink such as the Thermalloy No 2241
or equivalent The case of the device has no inter-
nal connection so it may be electrically connect-
ed to the sink if this is advantageous Be aware
however that this will affect the stray capaci-
tances to all pins and may thus require adjust-
ment of circuit compensation values
Burn-In Circuit
(Functional Diagram)
0032 – 14
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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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부품번호상세설명 및 기능제조사
ELH0032G

Fast Operational Amplifier

Elantec Semiconductor
Elantec Semiconductor

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