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EM564081BA-85 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM564081BA-85
기능 512K x 8 Low Power SRAM
제조업체 Etron Technology Inc.
로고 Etron Technology  Inc. 로고 



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EM564081BA-85 데이터시트, 핀배열, 회로
EtronTech
Features
Single power supply voltage of 2.3V to 3.6V
Power down features using CE1# and CE2
Low power dissipation
Data retention supply voltage: 1.0V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40°C to 85°C
Standby current @ VDD = 3.6 V
IDDS2
Typical Maximum
EM564081BA/BC-70/85
1 µA
10 µA
EM564081BA/BC-70E/85E
5 µA
80 µA
Ordering Information
Part Number
EM564081BC-70
EM564081BC-70E
EM564081BA-70
EM564081BA-70E
EM564081BC-85
EM564081BC-85E
EM564081BA-85
EM564081BA-85E
Speed
70 ns
70 ns
70 ns
70 ns
85 ns
85 ns
85 ns
85 ns
IDDS2
10 µA
80 µA
10 µA
80 µA
10 µA
80 µA
10 µA
80 µA
Package
6x8 BGA
6x8 BGA
8x10 BGA
8x10 BGA
6x8 BGA
6x8 BGA
8x10 BGA
8x10 BGA
EM564081
512K x 8 Low Power SRAM
Preliminary, Rev 0.7 01/2001
Pin Configuration
36-Ball BGA (CSP), Top View
12345
A A0 A1 CE2 A3 A6
6
A8
B
DQ4 A2 WE# A4
A7 DQ0
C DQ5
NC A5
DQ1
D GND
VDD
E VDD
GND
F DQ6
A18
A17
DQ2
G DQ7 OE# CE1# A16 A15 DQ3
H
A9
A10
A11
A12
A13
A14
Pin Description
Symbol
A0 - A18
DQ0 – DQ7
CE1#, CE2
OE#
WE#
GND
VDD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Ground
Power Supply
No Connection
Overview
The EM564081 is a 4,194,304-bit SRAM organized as 512K by 8 bits. It is designed with advanced CMOS
technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology
provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#)
is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. This device is
well suited to various microprocessor system applications where high speed, low power and battery backup are
required. And, with a guaranteed operating range from -40°C to 85°C, the EM564081 can be used in
environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM564081BA-85 pdf, 반도체, 판매, 대치품
EtronTech
EM564081
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current IIL IIN = 0V to VDD
-1
Output low
voltage
Output high
voltage
VOL IOL = 2.1 mA
VOH IOH = -1.0 mA
-
VDD -
0.15
IDD1
Operating current
IDD2
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
VDD = 3.6 V
Cycle time
= min
VDD = 2.7 V
VDD = 2.3 V
Cycle time = 1µs
IDDS1 CE1# = VIH or CE2 = VIL
Standby current IDDS2** CE1# = VDD – 0.2V or
(Note) CE2 = 0.2V
-70/85
VDD = 3.6 V
VDD = 2.7 V
VDD = 2.3 V
Notes:
-70E/85E VDD = 3.6 V
* Typical value are measured at Ta = 25°C.
** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition
CE2 VDD - 0.2V or CE2 0.2V.
15
10
7
1
0.8
0.5
5
1 µA
0.4 V
V
25
15
mA
12
5
0.5 mA
10
5 µA
3
80
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance
CIN
10 pF
VIN = GND
Output capacitance COUT
10 pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 0.7
January 2001

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EM564081BA-85 전자부품, 판매, 대치품
EtronTech
Write Cycle1
(WE# Controlled)(See Note 4)
Address
WE#
tAS
CE1#
tWC
tWP
tCW
EM564081
tWR
CE2
DOUT
DIN
tWHZ
(See Note2)
(See Note 5)
tCW
tOW
(See Note3)
tDS
VALID DATA IN
tDH
(See Note 5)
Preliminary
7
Rev 0.7
January 2001

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부품번호상세설명 및 기능제조사
EM564081BA-85

512K x 8 Low Power SRAM

Etron Technology  Inc.
Etron Technology Inc.
EM564081BA-85E

512K x 8 Low Power SRAM

Etron Technology  Inc.
Etron Technology Inc.

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