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EM564161BA-85 데이터시트 PDF




Etron Technology Inc.에서 제조한 전자 부품 EM564161BA-85은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 EM564161BA-85 기능
기능 256K x 16 Low Power SRAM
제조업체 Etron Technology Inc.
로고 Etron Technology  Inc. 로고


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EM564161BA-85 데이터시트, 핀배열, 회로
EtronTech
EM564161
256K x 16 Low Power SRAM
Preliminary, Rev 2.6 10/2000
Features
Single power supply voltage of 2.3V to 3.6V
Power down features using CE1# and CE2
Low power dissipation
Data retention supply voltage: 1.0V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40°C to 85°C
Standby current @ VDD = 3.6 V
IDDS2
Typical Maximum
EM564161BA/BC-70/85
1 µA
10 µA
EM564161BA-70E/85E
5 µA
80 µA
Pin Configuration
48-Ball BGA (CSP), Top View
12345
6
A
LB# OE#
A0
A1
A2 CE2
B
DQ8 UB#
A3
A4 CE1# DQ0
C
DQ9 DQ10 A5
A6 DQ1 DQ2
D
GND DQ11 A17 A7
DQ3 VDD
E
VDD DQ12 NC
A16 DQ4 GND
Ordering Information
F DQ14 DQ13 A14 A15 DQ5 DQ6
Part Number
EM564161BC-70
EM564161BA-70
EM564161BA-70E
EM564161BC-85
EM564161BA-85
EM564161BA-85E
Speed
70 ns
70 ns
70 ns
85 ns
85 ns
85 ns
IDDS2
10 µA
10 µA
80 µA
10 µA
10 µA
80 µA
Package
6x8 BGA
8x10 BGA
8x10 BGA
6x8 BGA
8x10 BGA
8x10 BGA
G DQ15 NC A12 A13 WE# DQ7
H NC A8 A9 A10 A11 NC
Pin Description
Symbol
A0 - A17
DQ0 - DQ15
CE1#, CE2
OE#
WE#
LB#, UB#
GND
VDD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM564161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating range from -40°C to 85°C, the EM564161 can be used in environments exhibiting
extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM564161BA-85 pdf, 반도체, 판매, 대치품
EtronTech
EM564161
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current
Output low
voltage
Output high
voltage
IIL
VOL
VOH
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
- 1 1 µA
-
VDD -
0.15
0.4 V
V
IDD1
Operating current
IDD2
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
VDD = 3.6 V
Cycle time
= min
VDD = 2.7 V
VDD = 2.3 V
Cycle time = 1µs
IDDS1 CE1# = VIH or CE2 = VIL
Standby current IDDS2** CE1# = VDD – 0.2V or
(Note) CE2 = 0.2V
-70/85
VDD = 3.6 V
VDD = 2.7 V
VDD = 2.3 V
Notes:
-70E/85E VDD = 3.6 V
* Typical value are measured at Ta = 25°C.
** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition
CE2 VDD - 0.2V or CE2 0.2V.
15 25
10 15
mA
7 12
5
0.5 mA
1 10
0.8 5 µA
0.5 3
5 80
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance
CIN
10 pF
VIN = GND
Output capacitance COUT
10 pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 2.6
October 2000

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EM564161BA-85 전자부품, 판매, 대치품
EtronTech
Write Cycle1
(WE# Controlled)(See Note 4)
Address
WE#
tAS
CE1#
tWC
tWP
tCW
EM564161
tWR
CE2
UB# , LB#
DOUT
DIN
tWHZ
(See Note2)
(See Note 5)
tCW
tBW
tDS
VALID DATA IN
tOW
(See Note3)
tDH
(See Note 5)
Preliminary
7
Rev 2.6
October 2000

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