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EM564166BC-85E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM564166BC-85E
기능 256K x 16 Low Power SRAM
제조업체 Etron Technology Inc.
로고 Etron Technology  Inc. 로고 



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EM564166BC-85E 데이터시트, 핀배열, 회로
EtronTech
EM564166
256K x 16 Low Power SRAM
Preliminary, Rev 1.0 05/2001
Features
Single power supply voltage of 2.3V to 3.6V
Power down features using CE#
Low power dissipation
Data retention supply voltage: 1.0V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40°C to 85°C
Standby current @ VDD = 3.6 V
IDDS2
Typical Maximum
EM564166BC-70/85
1 µA
10 µA
EM564166BC-70E/85E
5 µA
80 µA
Pin Configuration
48-Ball BGA (CSP), Top View
1234
5
6
A
LB# OE#
A0
A1
A2
NC
B
DQ8 UB#
A3
A4 CE# DQ0
C
DQ9 DQ10 A5
A6 DQ1 DQ2
D
GND DQ11 A17 A7
DQ3 VDD
E VDD DQ12 NC A16 DQ4 GND
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE# DQ7
Ordering Information
H NC A8 A9 A10 A11 NC
Part Number
EM564166BC-70
EM564166BC-85
EM564166BC-70E
EM564166BC-85E
Speed
70 ns
85 ns
70 ns
85 ns
IDDS2
10 µA
10 µA
80 µA
80 µA
Package
6x8 BGA
6x8 BGA
6x8 BGA
6x8 BGA
Pin Description
Symbol
A0 - A17
DQ0 - DQ15
CE#
OE#
WE#
LB#, UB#
GND
VDD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE#) is asserted high. There are two control inputs. CE# are used to select the device and for data
retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#)
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating range from -
40°C to 85°C, the EM564166 can be used in environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM564166BC-85E pdf, 반도체, 판매, 대치품
EtronTech
EM564166
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current
Output low
voltage
Output high
voltage
IIL
VOL
VOH
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
- 1 1 µA
-
VDD -
0.15
0.4 V
V
IDD1
Operating current
CE# = VIL and
IOUT = 0mA
Other Input = VIH / VIL
Cycle time
= min
VDD = 3.6 V
VDD = 2.7 V
VDD = 2.3 V
IDD2
Cycle time = 1µs
IDDS1 CE# = VIH
Standby current IDDS2 CE# VDD - 0.2V
Notes:
* Typical value are measured at Ta = 25°C.
-70/85
-70E/85E
VDD = 3.6 V
VDD = 2.7 V
VDD = 2.3 V
VDD = 3.6 V
15 25
10 15
mA
7 12
5
0.5 mA
1 10
0.8 5 µA
0.5 3
5 80
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input capacitance
CIN
10 pF
VIN = GND
Output capacitance COUT
10 pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
May 2001

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EM564166BC-85E 전자부품, 판매, 대치품
EtronTech
Write Cycle1
(WE# Controlled)(See Note 4)
Address
WE#
tAS
CE#
UB# , LB#
DO UT
DIN
tWHZ
(See Note2)
(See Note 5)
tWC
tWP
tCW
EM564166
tWR
tBW
tDS
VALID DATA IN
tOW
(See Note3)
tDH
(See Note 5)
Preliminary
7
Rev 1.0
May 2001

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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부품번호상세설명 및 기능제조사
EM564166BC-85

256K x 16 Low Power SRAM

Etron Technology  Inc.
Etron Technology Inc.
EM564166BC-85E

256K x 16 Low Power SRAM

Etron Technology  Inc.
Etron Technology Inc.

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