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EM565161BA-70 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EM565161BA-70
기능 512K x 16 Low Power SRAM
제조업체 Etron Technology Inc.
로고 Etron Technology  Inc. 로고 



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EM565161BA-70 데이터시트, 핀배열, 회로
Et r onT ec h
EM565161
512K x 16 Low Power SRAM
Preliminary, Rev 0.9 01/2002
Features
Single Power Supply Voltage, 2.3 ~ 3.6 V
Power Down Features Using CE1#, CE2, LB# and
UB#
Low Power Dissipation
Data retention Supply Voltage: 1.0V to 3.6V
Direct TTL Compatibility for All Input and Output
Wide Operating Temperature Range: -40°C to 85°C
Standby current (maximum) @ VDD = 3.6 V
Part Number
IDDS2
Typical Maximum
EM565161BA/BJ-55
2 µA
35 µA
EM565161BA/BJ-70
2 µA
25 µA
EM565161BA/BJ-55E/70E 14 µA
80 µA
Ordering Information
Part Number
Speed
EM565161BJ-70 70 ns
EM565161BA-70 70 ns
EM565161BA-70E 70 ns
EM565161BJ-55 55 ns
EM565161BA-55 55 ns
EM565161BA-55E 55 ns
IDDS2
25 µA
25 µA
80 µA
35 µA
35 µA
80 µA
Package
6x9 BGA
8x10 BGA
8x10 BGA
6x9 BGA
8x10 BGA
8x10 BGA
Pin Assignment
48-Ball BGA (CSP), Top View
12345
6
A
LB# OE#
A0
A1
A2 CE2
B
DQ8 UB#
A3
A4 CE1# DQ0
C
DQ9 DQ10 A5
A6 DQ1 DQ2
D
GND DQ11 A17
A7
DQ3 VDD
E
VDD DQ12 GND
A16
DQ4 GND
F
DQ14 DQ13 A14
A15
DQ5 DQ6
G
DQ15 NC
A12
A13 W E# DQ7
H
A18
A8
A9 A10 A11 NC
Pin Names
Symbol
A0 – A18
DQ0-DQ15
CE1#,CE2
OE#
WE#
LB#,UB#
GND
VDD
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable
Read/Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS
technology. This Device operates from a single power supply. Advanced circuit technology provides both high
speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are
asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control
pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor
system applications where high speed, low power and battery backup are required. And, with a guaranteed
operating range from –40°C to 85°C, the EM565161 can be used in environments exhibiting extreme
temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.




EM565161BA-70 pdf, 반도체, 판매, 대치품
Et r onT ec h
EM565161
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
Parameter
VDD
Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width 20ns
(2) Undershoot : -2.0V in case of pulse width 20ns
Min
2.3
2.2
-0.3(2)
1.0
Typ
3.0
Max
Unit
3.6
VDD + 0.3(1)
0.6
V
3.6
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter Symbol
Test Conditions
Min Typ* Max Unit
Input low current IIL IIN = 0V to VDD
Output low
voltage
Output high
voltage
VOL IOL = 2.1 mA
VOH IOH = -1.0 mA
Operating current
Standby current
IDD1
IDD2
IDDS1
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
CE1# = VIH or CE2 = VIL
IDDS2
CE1# = VDD 0.2V or
UB# and LB# = VDD-0.2V or
CE2 = 0.2V
- 1 1 µA
− − 0.4 V
VDD − − V
0.15
Cycle time = min
Cycle time = 1µs
12 35
mA
− −5
− − 0.3 mA
-55 2 35
µA
-70 2 25
Notes:
* Typical value are measured at Ta = 25°C.
-55E/70E
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol
Min
Max
Input capacitance
CIN
8
Input/Output capacitance
CIO
10
Notes: This parameter is periodically sampled and is not 100% tested.
Unit
pF
pF
14 80
Test Conditions
VIN = GND
VIO = GND
Preliminary
4
Rev 0.9
Jan 2002

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EM565161BA-70 전자부품, 판매, 대치품
Et r onT ec h
Write Cycle1
(WE# Controlled)(See Note 4)
Address
W E#
tAS
CE1#
tW C
tW P
tCW
EM565161
tW R
CE2
UB# , LB#
DOUT
DIN
tW HZ
(See Note2)
(See Note 5)
tCW
tBW
tDS
VALID DATA IN
tO W
(See Note3)
tDH
(See Note 5)
Preliminary
7
Rev 0.9
Jan 2002

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