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PDF EM6K1T2R Data sheet ( Hoja de datos )
| Número de pieza | EM6K1T2R | |
| Descripción | Small switching (30V/ 0.1A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistor
Small switching (30V, 0.1A)
EM6K1
EM6K1
!Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOSFET elements are independent, eliminating
interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
!Applications
Interfacing, switching (30V, 100mA)
!Structure
Silicon N-channel
MOSFET
!Packaging specifications
Type
EM6K1
Package
Code
Basic ordering unit
(pieces)
Taping
T2R
8000
!External dimensions (Units : mm)
EMT6
(4) (3)
(5) (2)
(6) (1)
1.2
1.6
Each lead has same dimensions
Abbreviated symbol : K1
!Equivalent circuit
(6) (5)
Gate
Protection
Diode
∗
(4)
Tr1
Tr2
(1)Tr1 Source
(2)Tr1 Gate
∗
Gate
(1) Protection
Diode
(2)
(3)Tr2 Drain
(4)Tr2 Source
(3) (5)Tr2 Gate
(6)Tr1 Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Reverse drain current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation (Tc=25°C)
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP∗1
∗2
PD
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Limits
30
±20
100
400
100
400
150
150
−55~+150
Unit
V
V
mA
mA
mA
mA
mW/TOTAL
120mW/1ELEMENT
°C
°C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EM6K1T2R.PDF ] | |
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