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PDF 2SC4559 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4559 | |
| Descripción | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4559 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power Transistors
2SC4559
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High collector to emitter VCEO
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
500
500
400
7
15
7
3
40
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 150V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
400 V
10
8
1.0 V
1.5 V
5.5 MHz
1.0 µs
3.0 µs
0.3 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4559.PDF ] | |
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