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2SC5319 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 2SC5319은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 2SC5319 자료 제공

부품번호 2SC5319 기능
기능 Silicon NPN Epitaxial Planar Type Transistor
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


2SC5319 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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2SC5319 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5319
2SC5319
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.3dB (f = 2 GHz)
High gain: S21e2 = 11.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 8 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 1.5 V
Collector current
IC 20 mA
Base current
IB 10 mA
Collector power dissipation
PC 100 mW
Junction temperature
Tj 125 °C
1,3 EMITTER
Storage temperature range
Tstg
55 to 125
°C
2 COLLECTOR
4 BASE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2K1A
Please design the appropriate reliability upon reviewing the
Weight: 6 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 15 mA
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
13 16 GHz
14.5 17
8.5 11.5
dB
0.9 1.8
dB
1.3 2.2
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 6 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 15 mA
VCB = 2.5 V, IE = 0, f = 1 MHz (Note)
50
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
1 μA
1 μA
250
0.6 pF
0.4 0.85 pF
2010-06-20




2SC5319 pdf, 반도체, 판매, 대치품
S-Parameter ZO = 50 Ω, Ta = 25°C
VCE = 3 V, IC = 1 mA
f
(MHz)
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
S11
Mag.
Ang.
0.838
52.3
0.813
57.7
0.793
62.3
0.780
67.0
0.736
72.6
0.733
77.0
0.709
82.4
0.688
87.2
0.686
89.8
0.668
93.8
0.643
97.7
0.619
102.6
0.589
107.3
0.593
107.8
0.560
112.4
0.564
116.6
0.590
119.3
S21
Mag.
Ang.
3.011
134.2
2.956
130.8
2.839
125.4
2.758
122.9
2.584
116.6
2.597
115.6
2.500
109.2
2.414
105.8
2.331
102.2
2.229
100.1
2.201
95.4
2.094
90.4
2.003
90.5
1.941
84.9
1.864
86.0
1.942
79.1
1.753
81.6
VCE = 3 V, IC = 3 mA
f S11
(MHz)
Mag.
Ang.
800
0.634
83.6
900
0.606
91.1
1000
0.587
96.3
1100
0.562
101.2
1200
0.528
108.0
1300
0.524
113.7
1400
0.504
118.2
1500
0.470
124.2
1600
0.480
127.2
1700
0.459
128.9
1800
0.445
134.4
1900
0.428
140.0
2000
0.424
143.1
2100
0.404
145.6
2200
0.385
149.3
2300
0.407
156.7
2400
0.437
155.7
S21
Mag.
Ang.
6.442
118.6
6.105
114.7
5.681
110.0
5.375
107.1
4.899
102.1
4.756
100.3
4.473
96.2
4.223
93.0
4.049
90.2
3.813
88.8
3.662
84.7
3.441
81.0
3.329
81.0
3.149
77.3
3.041
77.5
2.999
71.6
2.808
74.0
S12
Mag.
Ang.
0.146
56.2
0.161
53.4
0.174
49.5
0.183
46.4
0.194
42.6
0.198
39.5
0.202
38.0
0.206
36.1
0.213
35.7
0.228
34.4
0.236
30.4
0.236
27.4
0.239
24.9
0.236
23.0
0.240
22.5
0.247
19.6
0.239
16.5
S12
Mag.
Ang.
0.113
48.4
0.121
45.7
0.126
42.8
0.131
40.8
0.133
38.6
0.135
37.7
0.137
37.6
0.140
37.0
0.144
37.3
0.150
35.8
0.153
33.9
0.153
33.3
0.152
32.5
0.153
33.0
0.157
33.0
0.159
31.6
0.157
31.8
2SC5319
S22
Mag.
Ang.
0.880
38.1
0.854
40.8
0.842
44.8
0.811
47.9
0.798
51.6
0.778
54.5
0.760
57.6
0.739
60.7
0.728
63.5
0.713
66.2
0.707
69.3
0.698
71.5
0.686
74.7
0.678
76.7
0.666
79.6
0.668
81.8
0.656
84.0
S22
Mag.
Ang.
0.682
56.4
0.644
59.7
0.613
64.2
0.582
66.9
0.555
70.9
0.532
74.0
0.507
77.1
0.489
79.7
0.477
82.4
0.459
85.3
0.457
87.7
0.442
89.9
0.436
92.4
0.432
94.1
0.420
97.2
0.421
98.4
0.413
100.6
4 2010-06-20

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