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부품번호 | 2SC5319 기능 |
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기능 | Silicon NPN Epitaxial Planar Type Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5319
2SC5319
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure: NF = 1.3dB (f = 2 GHz)
• High gain: ⎪S21e⎪2 = 11.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 8 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 1.5 V
Collector current
IC 20 mA
Base current
IB 10 mA
Collector power dissipation
PC 100 mW
Junction temperature
Tj 125 °C
1,3 EMITTER
Storage temperature range
Tstg
−55 to 125
°C
2 COLLECTOR
4 BASE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2K1A
Please design the appropriate reliability upon reviewing the
Weight: 6 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 15 mA
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
13 16 ⎯ GHz
14.5 17
8.5 11.5
⎯
⎯
dB
⎯ 0.9 1.8
dB
⎯ 1.3 2.2
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 6 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 15 mA
VCB = 2.5 V, IE = 0, f = 1 MHz (Note)
⎯
⎯
50
⎯
⎯
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
⎯ 1 μA
⎯ 1 μA
⎯ 250 ⎯
0.6 ⎯ pF
0.4 0.85 pF
2010-06-20
S-Parameter ZO = 50 Ω, Ta = 25°C
VCE = 3 V, IC = 1 mA
f
(MHz)
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
S11
Mag.
Ang.
0.838
−52.3
0.813
−57.7
0.793
−62.3
0.780
−67.0
0.736
−72.6
0.733
−77.0
0.709
−82.4
0.688
−87.2
0.686
−89.8
0.668
−93.8
0.643
−97.7
0.619
−102.6
0.589
−107.3
0.593
−107.8
0.560
−112.4
0.564
−116.6
0.590
−119.3
S21
Mag.
Ang.
3.011
134.2
2.956
130.8
2.839
125.4
2.758
122.9
2.584
116.6
2.597
115.6
2.500
109.2
2.414
105.8
2.331
102.2
2.229
100.1
2.201
95.4
2.094
90.4
2.003
90.5
1.941
84.9
1.864
86.0
1.942
79.1
1.753
81.6
VCE = 3 V, IC = 3 mA
f S11
(MHz)
Mag.
Ang.
800
0.634
−83.6
900
0.606
−91.1
1000
0.587
−96.3
1100
0.562
−101.2
1200
0.528
−108.0
1300
0.524
−113.7
1400
0.504
−118.2
1500
0.470
−124.2
1600
0.480
−127.2
1700
0.459
−128.9
1800
0.445
−134.4
1900
0.428
−140.0
2000
0.424
−143.1
2100
0.404
−145.6
2200
0.385
−149.3
2300
0.407
−156.7
2400
0.437
−155.7
S21
Mag.
Ang.
6.442
118.6
6.105
114.7
5.681
110.0
5.375
107.1
4.899
102.1
4.756
100.3
4.473
96.2
4.223
93.0
4.049
90.2
3.813
88.8
3.662
84.7
3.441
81.0
3.329
81.0
3.149
77.3
3.041
77.5
2.999
71.6
2.808
74.0
S12
Mag.
Ang.
0.146
56.2
0.161
53.4
0.174
49.5
0.183
46.4
0.194
42.6
0.198
39.5
0.202
38.0
0.206
36.1
0.213
35.7
0.228
34.4
0.236
30.4
0.236
27.4
0.239
24.9
0.236
23.0
0.240
22.5
0.247
19.6
0.239
16.5
S12
Mag.
Ang.
0.113
48.4
0.121
45.7
0.126
42.8
0.131
40.8
0.133
38.6
0.135
37.7
0.137
37.6
0.140
37.0
0.144
37.3
0.150
35.8
0.153
33.9
0.153
33.3
0.152
32.5
0.153
33.0
0.157
33.0
0.159
31.6
0.157
31.8
2SC5319
S22
Mag.
Ang.
0.880
−38.1
0.854
−40.8
0.842
−44.8
0.811
−47.9
0.798
−51.6
0.778
−54.5
0.760
−57.6
0.739
−60.7
0.728
−63.5
0.713
−66.2
0.707
−69.3
0.698
−71.5
0.686
−74.7
0.678
−76.7
0.666
−79.6
0.668
−81.8
0.656
−84.0
S22
Mag.
Ang.
0.682
−56.4
0.644
−59.7
0.613
−64.2
0.582
−66.9
0.555
−70.9
0.532
−74.0
0.507
−77.1
0.489
−79.7
0.477
−82.4
0.459
−85.3
0.457
−87.7
0.442
−89.9
0.436
−92.4
0.432
−94.1
0.420
−97.2
0.421
−98.4
0.413
−100.6
4 2010-06-20
4페이지 | |||
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