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PDF 2SC829 Data sheet ( Hoja de datos )
| Número de pieza | 2SC829 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC829 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
20 V
5V
70 250
Transition frequency
fT VCB = 10V, IC = 1mA, f = 200MHz 150 230
MHz
Common emitter reverse transfer capacitance Cre
Reverse transfer impedance
Zrb
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
1.3 1.6 pF
60 Ω
*hFE Rank classification
Rank
B
hFE 70 ~ 160
C
110 ~ 250
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC829.PDF ] | |
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