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PDF 2SD0602A Data sheet ( Hoja de datos )
| Número de pieza | 2SD0602A | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SD0602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB0710A
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
I Features
• Low collector to emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
5
1
500
200
150
−55 to +150
Unit
V
V
V
A
mA
mW
°C
°C
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10°
1: Base
2: Emitter
3: Collector
Marking Symbol: X
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Transition frequency
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = 20 V, IE = 0
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Rank
Q
R
S No-rank
hFE1
Marking symbol
85 to 170
XQ
120 to 240
XR
170 to 340
XS
85 to 340
X
Product of no-rank is not classified and have no indication for rank.
Min
60
50
5
85
40
Typ Max
0.1
340
0.35 0.6
200
6 15
Unit
µA
V
V
V
V
MHz
pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD0602A.PDF ] | |
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