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PDF 2SD1010 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1010 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = 20V, IE = 0
100 nA
VCE = 20V, IB = 0
1 µA
IC = 10µA, IE = 0
50
V
IC = 1mA, IB = 0
40
V
IE = 10µA, IC = 0
15
V
VCE = 10V, IC = 2mA
400 1000 2000
IC = 10mA, IB = 1mA
0.05 0.2
V
VCB = 10V, IE = –2mA, f = 200MHz 200 MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
80 mV
*hFE Rank classification
Rank
R
S
T
hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1010.PDF ] | |
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