|
|
Número de pieza | 2SD1051 | |
Descripción | Silicon NPN epitaxial planer type(For low-frequency power amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1051 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SD1051
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB819
s Features
q High collector to emitter voltage VCEO.
q Large collector power dissipation PC.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage VCEO
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
3A
Collector current IC 1.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
IEBO
VCBO
VCEO
hFE*1
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VEB = 5V, IE = 0
IC = 1mA, IE = 0
IC = 2mA, IB = 0
VCE = 5V, IC = 1A*2
IC = 1.5A, IB = 0.15A*2
IC = 2A, IB = 0.2A*2
VCB = 5V, IE = –0.5A*2, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
50
40
80
*1hFE Rank classification
Rank
Q
R
hFE 80 ~ 160 120 ~ 220
typ max Unit
1 µA
100 µA
10 µA
V
V
120 220
1V
1.5 V
150 MHz
45 pF
*2 Pulse measurement
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD1051.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1051 | Silicon NPN epitaxial planer type(For low-frequency power amplification) | Panasonic Semiconductor |
2SD1052A | SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) | Toshiba |
2SD1055 | Medium Power Transistor 32V/ 2A | ROHM Semiconductor |
2SD1056 | NPN Transistor | Fuji Electric |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |