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PDF 2SD2012 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2012 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® 2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN
s LOW SATURATION VOLTAGE
s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS
s GENERAL PURPOSE POWER AMPLIFIERS
s GENERAL PURPOSE SWITCHING
DESCRIPTION
The 2SD2012 is a silicon NPN power transistor
housed in TO-220F insulated package.
It is inteded for power linear and switching
applications.
3
2
1
TO-220F
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc ≤ 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
October 2003
Value
60
60
7
3
6
0.5
25
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/5
1 page  
2SD2012
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SD2012.PDF ] | |
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