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PDF 2SD2051 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2051 | |
| Descripción | Silicon NPN epitaxial planar type Darlington(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
s Features
q High foward current transfer ratio hFE
q Incorporating a built-in zener diode
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
60±10
60±10
5
2.5
1.6
12
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE(sat)
fT
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1.0A
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA
VCE = 10V, IC = 10mA, f = 200MHz
min
50
50
5
4000
200
E
typ max Unit
1 µA
1 µA
70 V
70 V
V
40000
1.5 V
2.2 V
MHz
*hFE Rank classification
Rank
Q
R
S
hFE 4000 to 10000 8000 to 20000 16000 to 40000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2051.PDF ] | |
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