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부품번호 | DS_K6F8016U6B 기능 |
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기능 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | ||
제조업체 | Samsung semiconductor | ||
로고 | |||
K6F8016U6B Family
CMOS SRAM
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
- ICC2 change : 30mA to 28mA for 55ns product
25mA to 22mA for 70ns product
Draft Date
July 24, 2001
Remark
Preliminary
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2001
K6F8016U6B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.33)
Typ Max Unit
3.0 3.3 V
0 0V
-
Vcc+0.32)
V
- 0.6 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTIC
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
Min Typ1) Max Unit
ILI VIN=Vss to Vcc
-1 -
1 µA
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or
LB=UB=VIH, VIO=Vss to Vcc
-1 -
1 µA
Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V,
ICC1 LB≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or - - 2 mA
VIN≥VCC-0.2V
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
55ns
-
-
- 22
mA
- 28
VOL IOL = 2.1mA
VOH IOH = -1.0mA
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
- - 0.4 V
2.4 -
-V
- 0.5 15 µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
4 Revision 1.0
September 2001
4페이지 K6F8016U6B Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
tWC
tCW(2)
CMOS SRAM
tWR(4)
CS2
UB, LB
WE
Data in
Data out
tAS(3)
High-Z
Data Undefined
tAW
tBW
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
High-Z
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
tAS(3)
tWC
tCW(2)
CS1
CS2
tAW
UB, LB
WE
tBW
tWP(1)
Data in
tWR(4)
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 1.0
September 2001
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ DS_K6F8016U6B.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DS_K6F8016U6B | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
DS_K6F8016U6C | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |