|
|
|
부품번호 | DTA114EET1 기능 |
|
|
기능 | Bias Resistor Transistor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 12 페이지수
DTA114EET1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTA114EET1
6A
10 10 3000/Tape & Reel
DTA124EET1
6B
22 22
DTA144EET1
6C
47 47
DTA114YET1
6D
10 47
DTA114TET1
6E
10 ∞
DTA143TET1 6F 4.7 ∞
DTA123EET1 6H 2.2 2.2
DTA143ZET1 6K 4.7 47
DTA124XET1
6L
22 47
DTA123JET1 6M 2.2 47
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114EET1/D
1
IC/IB = 10
0.1
DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA114EET1
1000
TA = –25°C
75°C
25°C
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
50
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0.01 VO = 5 V
0
0
10
20
30 40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = –25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage versus Output Current
http://onsemi.com
4
4페이지 DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA114YET1
1
IC/IB = 10
0.1
0.01
TA = –25°C
75°C
25°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 18. VCE(sat) versus IC
80
180
160 VCE = 10 V
140
120
TA = 75°C
25°C
–25°C
100
80
60
40
20
0
1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 19. DC Current Gain
4.5
4 f = 1 MHz
lE = 0 V
3.5 TA = 25°C
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 20. Output Capacitance
100
TA = 75°C
25°C
–25°C
10
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 21. Output Current versus Input Voltage
10
VO = 0.2 V
75°C
1
25°C
TA = –25°C
+12 V
Typical Application
for PNP BRTs
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 22. Input Voltage versus Output Current
LOAD
Figure 23. Inexpensive, Unregulated Current Source
http://onsemi.com
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ DTA114EET1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DTA114EET1 | Bias Resistor Transistor | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |