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PDF DTA114GE Data sheet ( Hoja de datos )
| Número de pieza | DTA114GE | |
| Descripción | General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de DTA114GE (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by DTA114GE/D
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General Purpose Transistor
PNP Bipolar Junction Transistor
with a 10 kW Base–Emitter Resistor
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
RqJA
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
Value
50
50
5.0
100
20
150
78
833
–55 to 150
Unit
V
V
V
mA
mA
mW
mW
°C/W
°C
DTA114GE
50 Volts
100 mAmps
150 mW
3
2
1
CASE 463–01
SOT–416/SC–90
BASE (1)
RBE
RBE = 10 kW
COLLECTOR (3)
EMITTER (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Emitter Breakdown Voltage
m(IE = 720 Adc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0 Adc)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0 Adc)
BVCBO
Vdc
50 — —
BVCEO
Vdc
50 — —
BVEBO
Vdc
5.0 — —
ICBO
—
mAdc
— 0.5
IEBO
mAdc
300 — 580
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
m(IC = 10 mAdc, IB = 500 Adc)
hFE
VCE(sat)
30
—
——
Vdc
— 0.3
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
©MMoototorroollaa, ISncm. 1a9l9l–8Signal Transistors, FETs and Diodes Device Data
1
1 page  
PACKAGE DIMENSIONS
DTA114GE
S
D 3 PL
0.20 (0.008) M B
–A–
2
3
1
G –B–
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K 0.20 (0.008) A
JC
LH
CASE 463–01
ISSUE A
SOT–416/SC–90
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DTA114GE.PDF ] | |
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