PDF DTA114YE Data sheet ( Hoja de datos )

Número de pieza	DTA114YE
Descripción	Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Fabricantes	Motorola Inc
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DTA114YE/D Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DTA114YE 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTA114YE is housed in the SOT–416/SC–90 package which is ideal for low–power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel. 2 1 CASE 463–01, STYLE 1 SOT–416/SC–90 IN (1) R1 R2 OUT (3) GND (2) R1 = 10 kΩ R2 = 47 kΩ MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Output Voltage Input Voltage Output Current DEVICE MARKING DTA114YE = 59 THERMAL CHARACTERISTICS Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature Symbol VO VI IO Value – 50 –40 –100 Unit Vdc Vdc mAdc PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) Input On Voltage (VO = –0.3 Vdc, IO = –1.0 mAdc) VI(off) VI(on) — –1.4 — — Output On Voltage (IO = –5.0 mAdc, II = –0.25 mAdc) Input Current (VI = –5.0 Vdc) VO(on) II — — — — Output Cutoff Current (VO = – 50 Vdc) DC Current Gain (VO = –5.0 Vdc, IO = –5.0 mAdc) Input Resistance IO(off) GI R1 — 68 7.0 — — 10 Resistance Ratio R1/R2 0.17 0.21 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. Max –0.3 — –0.3 –0.88 –500 — 13 0.25 Unit Vdc Vdc Vdc mAdc nAdc — kOhms This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Thermal Clad is a trademark of the Bergquist Company REV 1 ©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data 1 1 page PACKAGE DIMENSIONS DTA114YE S D 3 PL 0.20 (0.008) M B –A– 2 3 1 G –B– STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR K 0.20 (0.008) A JC LH CASE 463–01 ISSUE A SOT–416/SC–90 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 0.70 0.80 0.028 0.031 B 1.40 1.80 0.055 0.071 C 0.60 0.90 0.024 0.035 D 0.15 0.30 0.006 0.012 G 1.00 BSC 0.039 BSC H ––– 0.10 ––– 0.004 J 0.10 0.25 0.004 0.010 K 1.45 1.75 0.057 0.069 L 0.10 0.20 0.004 0.008 S 0.50 BSC 0.020 BSC Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 5 Page

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