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PDF DTA124XET1 Data sheet ( Hoja de datos )
| Número de pieza | DTA124XET1 | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | ON Semiconductor | |
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DTA114EET1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTA114EET1
6A
10 10 3000/Tape & Reel
DTA124EET1
6B
22 22
DTA144EET1
6C
47 47
DTA114YET1
6D
10 47
DTA114TET1
6E
10 ∞
DTA143TET1 6F 4.7 ∞
DTA123EET1 6H 2.2 2.2
DTA143ZET1 6K 4.7 47
DTA124XET1
6L
22 47
DTA123JET1 6M 2.2 47
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114EET1/D
1 page  
10
IC/IB = 10
DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA124EET1
1000
VCE = 10 V
1 25°C
TA = –25°C
100
75°C
0.1
TA = 75°C
25°C
–25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
100
4 100
f = 1 MHz
75°C 25°C
3
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0.01
VO = 5 V
0
0 10
20
30
40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 12. Input Voltage versus Output Current
http://onsemi.com
5
5 Page 
Notes
DTA114EET1 SERIES
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet DTA124XET1.PDF ] | |
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