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PDF DTA125TKA Data sheet ( Hoja de datos )
| Número de pieza | DTA125TKA | |
| Descripción | Digital transistor (built-in resistor) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
DTA125TUA / DTA125TKA / DTA125TSA
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power DTA125TUA / DTA125TKA
dissipation
DTA125TSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
300
150
−55 ∼ +150
Unit
V
V
V
mA
mW
°C
°C
!Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA125TUA
UMT3
9A
T106
3000
DTA125TKA
SMT3
9A
T146
3000
DTA125TSA
SPT
−
TP
5000
!External dimensions (Units : mm)
DTA125TUA
1.25
2.1
0.1to0.4
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTA125TKA
1.6
2.8
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTA125TSA
4
2
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
−50
−50
−5
−
−
−
100
140
−
Typ.
−
−
−
−
−
−
250
200
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
260
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −50V
VEB = −4V
IC = −0.5mA , IB = −0.05mA
IC = −1mA , VCE = −5V
−
VCE = −10V , IE = 5mA , f = 100MHz
∗
!Circuit schematic
B
R1
E : Emitter
C : Collector
B : Base
C
E
1 page | ||
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| PDF Descargar | [ Datasheet DTA125TKA.PDF ] | |
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