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PDF DTA1E Data sheet ( Hoja de datos )
| Número de pieza | DTA1E | |
| Descripción | 1.0A Bidirectional Thyristor | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN2283B
Silicon Planar Type
DTA1
1.0A Bidirectional Thyristor
Features
• Low AC power control use.
• Peak OFF-state voltage : 200 to 400V
• RMS ON-state current : 1A
• TO-92 package.
Absolute Maximum Ratings at Ta=25°C
Repetitive Peak
VDRM
OFF-StateVoltage
RMS ON-State Current
IT(RMS) Tc=74°C, single-phase
full-wave
Surge ON-State Current
Amperes Squared-Seconds
ITSM
∫ i2T·dt
Peak 1 cycle, 50Hz
1ms≤t≤10ms
Peak Gate Power Dissipation PGM
f≥50Hz, duty≤10%
Average Gate Power Dissipation PG(AV)
Peak Gate Current
IGM
Peak Gate Voltage
VGM
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
Junction Temperature
Tj
Strage Temperature
Tstg
Weght
DTA1C DTA1E
200 400
→ 1.0
→8
→ 0.32
→1
→ 0.1
→ ±0.5
→ ±6
→ 125
–40 to +125
→ 0.2
unit
V
A
A
A2s
W
W
A
V
°C
°C
g
Electrical Characteristics at Ta=25°C
Repetitive Peak
OFF-State Current
IDRM
Peak ON-State Voltage
Holding Current
Gate Trigger Current* (I)
(II)
(III)
(IV)
Gate Trigger Voltage* (I)
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
VTM
IH
IGT
IGT
IGT
IGT
VGT
VGT
VGT
VGT
VGD
Rth(j-c)
* : The gate trigger mode is shown below.
Trigger mode T2 T1 G
I +–+
II + – –
III – + +
IV – + –
Tj=25°C, VD=VDRM
min typ max
10
ITM=1.5A
1.5
VD=12V, gate open
10
VD=12V, RL=20Ω
5
VD=12V, RL=20Ω
5
VD=12V, RL=20Ω
10
VD=12V, RL=20Ω
5
VD=12V, RL=20Ω
2
VD=12V, RL=20Ω
2
VD=12V, RL=20Ω
2–
VD=12V, RL=20Ω
2
Tc=125°C, VD=VDRM
0.2
–
Between junction and case, AC
40
Package Dimensions 1192B
(unit : mm)
unit
µA
V
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3089MO, TS No.2283-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DTA1E.PDF ] | |
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