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Número de pieza | DTB133HS | |
Descripción | Digital transistors (built-in resistors) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DTB133HS (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Transistors
DTB133HK / DTB133HS
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Power
DTB133HK
dissipation DTB133HS
Junction temperature
Storage temperature
Symbol
VCC
VI
IC
Pd
Tj
Tstg
Limits
−50
−20
6
−500
200
300
150
−55~150
Unit
V
V
mA
mW
°C
°C
!External dimensions (Units : mm)
DTB133HK
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTB133HS
4
2
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
!Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTB133HK
SMT3
G98
T146
3000
DTB133HS
SPT
-
TP
5000
!Circuit schematic
R1
IN
R2
IN
OUT
GND (+)
OUT
GND (+)
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
−2
-
-
-
56
2.31
2.4
-
Typ.
-
-
−0.1
-
-
-
3.3
3
200
Max.
−0.3
-
−0.3
−2.4
−0.5
-
4.29
3.7
-
Unit
V
V
mA
µA
-
kΩ
-
MHz
Conditions
VCC = −5V , IO = −100µA
VO = −0.3V , IO = −20mA
IO = −50mA , II = −2.5mA
VI = −5V
VCC = −50V , VI = 0V
IO = −50mA , VO = −5V
-
-
VCE = −10V , IE = 5mA , f = 100MHz
∗
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet DTB133HS.PDF ] |
Número de pieza | Descripción | Fabricantes |
DTB133HK | Digital transistors (built-in resistors) | ROHM Semiconductor |
DTB133HS | Digital transistors (built-in resistors) | ROHM Semiconductor |
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