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PDF DTB133HS Data sheet ( Hoja de datos )

Número de pieza DTB133HS
Descripción Digital transistors (built-in resistors)
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! DTB133HS Hoja de datos, Descripción, Manual

Transistors
DTB133HK / DTB133HS
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Power
DTB133HK
dissipation DTB133HS
Junction temperature
Storage temperature
Symbol
VCC
VI
IC
Pd
Tj
Tstg
Limits
50
20
6
500
200
300
150
55~150
Unit
V
V
mA
mW
°C
°C
!External dimensions (Units : mm)
DTB133HK
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTB133HS
4
2
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
!Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTB133HK
SMT3
G98
T146
3000
DTB133HS
SPT
-
TP
5000
!Circuit schematic
R1
IN
R2
IN
OUT
GND (+)
OUT
GND (+)
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
2
-
-
-
56
2.31
2.4
-
Typ.
-
-
0.1
-
-
-
3.3
3
200
Max.
0.3
-
0.3
2.4
0.5
-
4.29
3.7
-
Unit
V
V
mA
µA
-
k
-
MHz
Conditions
VCC = 5V , IO = 100µA
VO = 0.3V , IO = 20mA
IO = 50mA , II = 2.5mA
VI = 5V
VCC = 50V , VI = 0V
IO = 50mA , VO = 5V
-
-
VCE = 10V , IE = 5mA , f = 100MHz

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