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PDF DTC114Y Data sheet ( Hoja de datos )
| Número de pieza | DTC114Y | |
| Descripción | NPN SILICON BIAS RESISTOR TRANSISTOR | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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DTC114E SERIES
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
VCBO
VCEO
IC
PD
50 Vdc
50 Vdc
100 mAdc
350 mW
2.81 mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
RθJA
357 °C/W
Operating and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
TL
260 °C
10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
DTC114E
DTC114E
10
10
DTC124E
DTC124E
22
22
DTC144E
DTC144E
47
47
DTC114Y
DTC114Y
10
47
DTC114T
DTC114T
10
∞
DTC143T
DTC143T
4.7
∞
DTD113E DTD113E 1.0 1.0
DTC123E DTC123E 2.2 2.2
DTC143E DTC143E 4.7 4.7
DTC143Z DTC143Z 4.7 47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114E/D
1 page  
1
IC/IB = 10
0.1
0.01
DTC114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTC124E
TA = –25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
– 0.001
0
4
3
2
1
0
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
80 1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
f = 1 MHz
lE = 0 V
TA = 25°C
100
10
1
75°C 25°C
TA = –25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0.01
VO = 5 V
0.001
50 0
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = –25°C
75°C 25°C
1
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
5 Page 
Notes
DTC114E SERIES
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet DTC114Y.PDF ] | |
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