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DTC124EET1 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


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부품번호 DTC124EET1 기능
기능 NPN SILICON BIAS RESISTOR TRANSISTORS
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DTC124EET1 데이터시트, 핀배열, 회로
DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
8A
8B
8C
8D
8F
8H
8J
8K
8L
8M
10 10 3000/Tape & Reel
22 22
47 47
10 47
4.7
2.2 2.2
4.7 4.7
4.7 47
22 47
2.2 47
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114EET1/D




DTC124EET1 pdf, 반도체, 판매, 대치품
1
IC/IB = 10
0.1
0.01
DTC114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1
TA = –25°C
25°C
1000
75°C
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = –25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance
0.01
VO = 5 V
0.001
50 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 6. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage versus Output Current
http://onsemi.com
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DTC124EET1 전자부품, 판매, 대치품
DTC114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTC114YET1
1
IC/IB = 10
0.1
0.01
TA = –25°C
25°C
75°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 18. VCE(sat) versus IC
80
300
VCE = 10
250
200
150
TA = 75°C
25°C
–25°C
100
50
01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 19. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 20. Output Capacitance
100
TA = 75°C
10
25°C
–25°C
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 21. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 22. Input Voltage versus Output Current
http://onsemi.com
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DTC124EET1

NPN SILICON BIAS RESISTOR TRANSISTORS

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