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PDF DTC143EET1 Data sheet ( Hoja de datos )
| Número de pieza | DTC143EET1 | |
| Descripción | NPN SILICON BIAS RESISTOR TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
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DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
8A
8B
8C
8D
8F
8H
8J
8K
8L
8M
10 10 3000/Tape & Reel
22 22
47 47
10 47
4.7 ∞
2.2 2.2
4.7 4.7
4.7 47
22 47
2.2 47
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114EET1/D
1 page  
DTC114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTC124EET1
1
IC/IB = 10
0.1 TA = –25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
4
3
2
1
0
0
10
20
40 50
1
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
10
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
10
1
75°C 25°C
TA = –25°C
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 10. Output Capacitance
0.01
0.001
50 0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 11. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = –25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage versus Output
Current
http://onsemi.com
5
5 Page 
DTC114EET1 SERIES
S
D 3 PL
0.20 (0.008) M B
–A–
2
3
1
J
L
PACKAGE DIMENSIONS
SC–75
(SOT–416)
CASE 463–01
ISSUE B
G –B–
K 0.20 (0.008) A
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H ––– 0.10 ––– 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
http://onsemi.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet DTC143EET1.PDF ] | |
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