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PDF DTC8G-N Data sheet ( Hoja de datos )
| Número de pieza | DTC8G-N | |
| Descripción | 8A Bidirectional Thyristor | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN1877C
Silicon Planar Type
DTC8-N
8A Bidirectional Thyristor
Features
• Peak OFF-state voltage : 200 to 600V
• RMS ON-state current : 8A
• TO-220 package.
Absolute Maximum Ratings at Ta=25°C
DTC8C-N
Repetitive Peak
VDRM
200
OFF-StateVoltage
RMS ON-State Current
IT(RMS) Tc=105°C, single-phase
→
full-wave
Surge ON-State Current
Amperes Squared-Seconds
ITSM
∫ i2T·dt
Peak 1 cycle, 50Hz
1ms≤t≤10ms
→
→
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Junction Temperature
PGM
PG(AV)
IGM
VGM
Tj
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
f≥50Hz, duty≤10%
→
→
→
→
→
Strage Temperature
Tstg
Weght
→
DTC8E-N
400
→
→
→
→
→
→
→
→
→
→
DTC8G-N unit
600 V
8A
80 A
32 A2s
5W
0.5 W
±2 A
±10 V
125 °C
–40 to +125 °C
1.8 g
Electrical Characteristics at Ta=25°C
Repetitive Peak
OFF-State Current
IDRM
Peak ON-State Voltage
Critical Rate of Rise of
VTM
dv/dt
OFF-State Voltage
Holding Current
Gate Trigger Current* (I)
(II)
(III)
(IV)
Gate Trigger Voltage* (I)
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
IH
IGT
IGT
IGT
IGT
VGT
VGT
VGT
VGT
VGD
Rth(j-c)
* : The gate trigger mode is shown below.
Trigger mode
I
II
III
IV
T2 T1
+–
+–
–+
–+
G
+
–
+
–
Tj=125°C, VD=VDRM
min typ max
2
ITM=12A
Tj=125°C, VD=200V (C),
400V (E to G)
RL=100Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
VD=12V, RL=20Ω
Tc=125°C, VD=VDRM
Between junction and case, AC
10
0.2
1.5
50
30
30
50
30
2
2
2
2
2
Package Dimensions 1155A
(unit : mm)
unit
mA
V
V/µ s
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1877-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DTC8G-N.PDF ] | |
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