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DTD113E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DTD113E
기능 NPN SILICON BIAS RESISTOR TRANSISTOR
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DTD113E 데이터시트, 핀배열, 회로
DTC114E SERIES
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
VCBO
VCEO
IC
PD
50 Vdc
50 Vdc
100 mAdc
350 mW
2.81 mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
RθJA
357 °C/W
Operating and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
TL
260 °C
10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
DTC114E
DTC114E
10
10
DTC124E
DTC124E
22
22
DTC144E
DTC144E
47
47
DTC114Y
DTC114Y
10
47
DTC114T
DTC114T
10
DTC143T
DTC143T
4.7
DTD113E DTD113E 1.0 1.0
DTC123E DTC123E 2.2 2.2
DTC143E DTC143E 4.7 4.7
DTC143Z DTC143Z 4.7 47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114E/D




DTD113E pdf, 반도체, 판매, 대치품
250
200
150
100
50
0
–50
DTC114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114E
1
IC/IB = 10
0.1
TA = –25°C
25°C
75°C
RθJA = 625°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
0.01
150
0.001
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
80
1000 4
VCE = 10 V
TA = 75°C
25°C
–25°C
3
100 2
f = 1 MHz
lE = 0 V
TA = 25°C
1
10
1
10
100 0 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
10
25°C
TA = –25°C
1
0.1
0.01
VO = 5 V
0.001
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. VCE(sat) versus IC
10
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. VCE(sat) versus IC
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DTD113E 전자부품, 판매, 대치품
DTC114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114Y
1
IC/IB = 10
0.1
0.01
TA = –25°C
25°C
75°C
300
VCE = 10
250
200
150
100
TA = 75°C
25°C
–25°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
50
80 01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
100
75°C 25°C
TA = –25°C
10
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
http://onsemi.com
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DTD113E

NPN SILICON BIAS RESISTOR TRANSISTOR

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