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부품번호 | 74ABT861PWDH 기능 |
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기능 | 10-bit bus transceiver 3-State | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
INTEGRATED CIRCUITS
74ABT861
10-bit bus transceiver (3-State)
Product specification
Supersedes data of 1995 Sep 06
IC23 Data Handbook
1998 Jan 16
Philips
Semiconductors
Philips Semiconductors
10-bit bus transceiver (3-State)
Product specification
74ABT861
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
∆t/∆v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level input voltage
High-level output current
Low-level output current
Input transition rise or fall rate
Operating free-air temperature range
LIMITS
Min Max
4.5 5.5
0 VCC
2.0
0.8
–32
64
05
–40 +85
UNIT
V
V
V
V
mA
mA
ns/V
°C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Tamb = +25°C
Tamb = –40°C
to +85°C
UNIT
Min Typ Max Min Max
VIK Input clamp voltage
VCC = 4.5V; IIK = –18mA
–0.9 –1.2
–1.2 V
VCC = 4.5V; IOH = –3mA; VI = VIL or VIH
2.5 3.5
2.5
V
VOH High–level output voltage
VCC = 5.0V; IOH = –3mA; VI = VIL or VIH
3.0 4.0
3.0
V
VCC = 4.5V; IOH = –32mA; VI = VIL or VIH
2.0 2.6
2.0
V
VOL Low–level output voltage
VCC = 4.5V; IOL = 64mA; VI = VIL or VIH
0.42 0.55
0.55 V
II Input leakage Control pins VCC = 5.5V; VI = GND or 5.5V
current
Data pins
VCC = 5.5V; VI = GND or 5.5V
IOFF Power-off leakage current
VCC = 0.0V; VO or VI ≤ 4.5V
±0.01
±5.0
±5.0
±1.0
±100
±100
±1.0
±100
±100
µA
µA
µA
IPU/PD
Power–up/down 3-State
output current3
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
V OE = VCC
±5.0 ±50
±50 µA
IIH + IOZH 3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or VIH
5.0 50
50 µA
IIL + IOZL 3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or VIH
–5.0 –50
–50 µA
ICEX Output high leakage current VCC = 5.5V; VO = 5.5V; VI = GND or VCC
5.0 50
50 µA
IO Output current1
VCC = 5.5V; VO = 2.5V
–50 –100 –180 –50 –180 mA
ICCH
VCC = 5.5V; Outputs High, VI = GND or VCC
0.5 250
250 µA
ICCL Quiescent supply current
VCC = 5.5V; Outputs Low, VI = GND or VCC
25 38
38 mA
ICCZ
VCC = 5.5V; Outputs 3-State;
VI = GND or VCC
0.5 50
50 µA
Outputs enabled, one input at 3.4V,
other inputs at VCC or GND; VCC = 5.5V
0.5 1.5
1.5 mA
∆ICC
Additional supply current per Outputs 3-State, one data input at 3.4V,
input pin2
other inputs at VCC or GND; VCC = 5.5V
0.01 50
50 µA
Outputs 3-State, one enable input at 3.4V,
other inputs at VCC or GND; VCC = 5.5V
0.5 1.5
1.5 mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. For VCC = 2.1V to VCC = 5V " 10%, a
transition time of up to 100µsec is permitted.
1998 Jan 16
4
4페이지 Philips Semiconductors
10-bit bus transceiver (3-State)
SO24: plastic small outline package; 24 leads; body width 7.5 mm
Product specification
74ABT861
SOT137-1
1998 Jan 16
7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ 74ABT861PWDH.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
74ABT861PWDH | 10-bit bus transceiver 3-State | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |