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Datasheet 6AM14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 6AM14 | Silicon N-Channel/P-Channel Power MOS FET Array 6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current High speed switching High density mounting
Outline
6AM14
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Drain to source voltage Gate to so |  Hitachi Semiconductor | data |
6AM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 6AM11 | Silicon N-channel/p-channel Power MOS Fet Array To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i  Renesas data | | |
| 2 | 6AM12 | Silicon N-channel/p-channel Complementary Power MOS Fet Array To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i Renesas data | | |
| 3 | 6AM13 | Silicon N-Channel/P-Channel Complementary Power MOS FET Array 6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET Array
ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A • Capab Hitachi Semiconductor data | | |
| 4 | 6AM14 | Silicon N-Channel/P-Channel Power MOS FET Array 6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current High speed switching High density mounting
Outline
6AM14
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Drain to source voltage Gate to so Hitachi Semiconductor data | | |
| 5 | 6AM15 | Silicon N/P Channel MOS FET High Speed Power Switching 6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-719 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density moun Hitachi Semiconductor data | |
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