|
|
|
부품번호 | 6MBI100S-120 기능 |
|
|
기능 | IGBT MODULE(S series) | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 4 페이지수
6MBI100S-120
IGBT MODULE ( S series)
1200V / 100A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25°C
current
Tc=80°C
1ms Tc=25°C
Tc=80°C
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
VCES
VGES
IC
IC pulse
-IC
-IC pulse
PC
Tj
Tstg
Vis
Mounting *1
Rating
Unit
1200
V
±20 V
150 A
100
300 A
200
100 A
200 A
700 W
+150
°C
-40 to +125
°C
AC 2500 (1min.) V
3.5 N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
IGBT Modules
Equivalent Circuit Schematic
21(P)
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu)
3(Gx)
4(Ex)
20(N)
6(Ev)
19(U)
7(Gy)
8(Ey)
10(Ew)
17(V)
11(Gz)
12(Ez)
15(W)
14(N)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
Reverse recovery time
trr
Characteristics
Min.
Typ.
––
––
5.5 7.2
– 2.3
– 2.8
– 12000
– 2500
– 2200
– 0.35
– 0.25
– 0.1
– 0.45
– 0.08
– 2.5
– 2.0
––
Max.
1.0
0.2
8.5
2.6
–
–
–
–
1.2
0.6
–
1.0
0.3
3.3
–
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
Tj=25°C VGE=15V, IC=100A
Tj=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=±15V
RG=12Ω
Tj=25°C
Tj=125°C
IF=100A
IF=100A, VGE=0V
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
–
– 0.18 IGBT
Thermal resistance
Rth(j-c)
–
– 0.36 FWD
Rth(c-f)*2
–
0.05 –
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W
6MBI100S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
250
Tj=125 oC
Tj=25 oC
200
150
300
100
100
50
0
01234
Forward on voltage : VF [ V ]
Transient thermal resistance
1
10
0
FWD
IGBT
0.1
M626
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=12Ω ,Tj=25oC
trr(125 oC)
Irr(125 oC)
trr(25 oC)
Irr(25 oC)
50 100
Forward current : IF [ A ]
150
200
0.01
0.001
0.01 0.1
Pulse width : Pw [ sec ]
Outline Drawings, mm
1
8-R2.25±0.3
4-ø5.5±0.3
13.09 19.05
122±1
110±0.3
94.5±0.3
19.05 19.05
19.05
+0.5
11.5 0
19 18 17 16 15
3.81
3.81
99.6±0.3
4.06
1 23 45 67 89
11
15 15.24 15.24 15.24 15.24 15.24
118.11
12
AA
ø2.5±0.1
ø2.1±0.1
Section A-A
1.15±0.2 ø0.4
Shows theory dimensions
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ 6MBI100S-120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6MBI100S-120 | IGBT MODULE(S series) | Fuji Electric |
6MBI100S-120-01 | IGBT Module | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |