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PDF 6MBP75RA-120 Data sheet ( Hoja de datos )
| Número de pieza | 6MBP75RA-120 | |
| Descripción | Intelligent Power Module ( R-Series ) | |
| Fabricantes | Fuji Electric | |
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6MBP 75RA-120
IGBT IPM
1200V
6x75A
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min. Max.
DC Bus Voltage
VDC
DC Bus Voltage (surge)
VDC(Surge)
DC Bus Voltage (short operating)
VSC
Collector-Emitter Voltage
VCES
Inverter
Continuous
IC
Collector
1ms
ICP
Current
Duty=62.6%
-IC
Collector Power Dissipation One Transistor PC
Voltage of Power Supply for Driver
VCC
Input Signal Voltage
VIN
Input Signal Current
IIN
Alarm Signal Voltage
VALM
Alarm Signal Current
IALM
Junction Temperature
Tj
Operating Temperature
TOP
Storage Temperature
Tstg
Isolation Voltage
A.C. 1min.
Viso
Screw Torque
Mounting *1
Terminals *1
0
0
200
0
0
0
0
-20
-40
900
1000
800
1200
75
150
75
595
20
VZ
1
VCC
15
150
100
125
2500
3.5
3.5
V
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
n Outline Drawing
Items
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=1200V, Input Terminal Open
IC=75A
-IC=75A
Min.
Typ.
Max.
1.0
2.6
3.0
Units
mA
V
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
ICCP
ICCN
VIN(th)
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
tALM
RALM
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
Surface Of IGBT Chip
Tj=125°C
Tj=25°C
Under Voltage Protection Level
Hysteresis
VUV
VH
Min.
3
10
1.00
1.25
110
150
113
1.5
1425
11.0
0.2
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Switching Time
tON
tOFF
tRR
Conditions
IC=50A, VDC=600V
IF=50A, VDC=600V
Min.
0.3
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
1.35
1.60
8.0
20
20
10
2
1500
Typ.
Typ.
0.05
Max.
18
65
1.70
1.95
Units
mA
V
125
°C
1575
12.5
A
µs
ms
Ω
V
Max.
3.6
0.4
Units
µs
Max.
0.21
0.47
Units
°C/W
1 page  
n Inverter
100
10-1
10-2
10-3
6MBP 75RA-120
IGBT IPM
1200V
6x75A
Transient Thermal Resistance
FWD
IGBT
10-2
10-1
Pulse Width : PW [sec]
100
1050
900
750
600
450
300
150
0
0
Reverse Biased Safe Operating Area
VCC=15V, Tj<125°C
SCSOA
(non-repetitive pulse)
RBSOA
(repetitive pulse)
200 400 600 800 1000 1200 1400
Collector-Emitter Voltage : VCE [V]
Power Derating For IGBT
(per device)
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Case Temperature : T (°C)
C
35
30
25
20
15
10
5
0
0
Switching Loss vs. Collector Current
V DC=600V, VCC=15V, Tj=25°C
E on
E off
E rr
20 40 60 80 100 120 140
Collector Current : IC [A]
Power Derating For FWD
200 (per device)
150
100
50
0
0 20 40 60 80 100 120 140 160
Case Temperature : TC (°C)
35
30
25
20
15
10
5
0
0
Switching Loss vs. Collector Current
V =300V, V =15V, T =125°C
DC CC j
E
on
Eoff
E rr
20 40 60 80 100 120 140
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 6MBP75RA-120.PDF ] | |
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