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7413 PDF 데이터시트 ( Data , Function )

부품번호 7413 기능
기능 Power MOSFET(Vdss=30V/ Id=12A)
제조업체 International Rectifier
로고 International Rectifier 로고 


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7413 데이터시트, 핀배열, 회로
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
30V
PD- 91330F
IRF7413
HEXFET® Power MOSFET
RDS(on) max(mW) ID
11@VGS = 10V 12A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
12
9.6
96
2.5
0.02
± 20
1.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
3/19/02




7413 pdf, 반도체, 판매, 대치품
IRF7413
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ci s s
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 7.2A
10
8
VDS= 24V
VDS= 15V
VDS= 6.0V
6
4
2
0
0 10 20 30 40
QG Total Gate Charge (nC)
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
TJ = 150°C
10.0
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1.0
0.1
0.4
TJ = 25°C
VGS = 0V
0.6 0.8 1.0
VSD, Source-toDrain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
01
1msec
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com

4페이지










7413 전자부품, 판매, 대치품
IRF7413
SO-8 Package Details
DB
A5
6
E
8765
1234
H
0.25 [.010]
A
6X e
e1
A
C
y
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT E S :
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO
A S UBS TRATE.
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNAT IONAL
R E CT IF IE R
LOGO
YWW
XXXX
F 7101
INCH E S
DIM
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BAS IC
e 1 .025 BAS IC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
MILLIMET ERS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 BASIC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
DAT E CODE (YWW)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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