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SSP4N60B 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 SSP4N60B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SSP4N60B 자료 제공

부품번호 SSP4N60B 기능
기능 600V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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SSP4N60B 데이터시트, 핀배열, 회로
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.0A, 600V, RDS(on) = 2.5@VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
SSP4N60B SSS4N60B
600
4.0 4.0 *
2.5 2.5 *
16 16 *
± 30
240
4.0
10
5.5
100 33
0.8 0.26
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP4N60B
1.25
0.5
62.5
SSS4N60B
3.79
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002




SSP4N60B pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by RDS(on)
101 100 µs
1 ms
10 ms
100 DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-1. Maximum Safe Operating Area
for SSP4N60B
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
©2002 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 2.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
Operation in This Area
is Limited by RDS(on)
101
100 µs
1 ms
10 ms
100 100 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-2. Maximum Safe Operating Area
for SSS4N60B
Rev. B, June 2002

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SSP4N60B 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002

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