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What is KM416C4000B?

This electronic component, produced by the manufacturer "Samsung semiconductor", performs the same function as "4M x 16bit CMOS Dynamic RAM with Fast Page Mode".


KM416C4000B Datasheet PDF - Samsung semiconductor

Part Number KM416C4000B
Description 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Manufacturers Samsung semiconductor　
Logo Samsung semiconductor Logo　


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KM416C4000B, KM416C4100B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this fam-
ily have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri-
cated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM416C4000B(5.0V, 8K Ref.)
- KM416C4100B(5.0V, 4K Ref.)
• Active Power Dissipation
Speed
-45
-5
-6
8K
550
495
440
Unit : mW
4K
715
660
605
• Refresh Cycles
Part
NO.
KM416C4000B*
KM416C4100B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
• Performance Range
Speed tRAC
tCAC
-45 45ns 12ns
-5 50ns 13ns
-6 60ns 15ns
tRC
80ns
90ns
110ns
tPC
31ns
35ns
40ns
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

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KM416C4000B equivalent
KM416C4000B, KM416C4100B
CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Symbol
CIN1
CIN2
CDQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
tDS
tDH
80
115
45
12
23
0
0 13
1 50
25
45 10K
12
45
12 10K
18 33
13 22
5
0
8
0
8
23
0
0
0
8
8
13
12
0
10
-5
Min Max
90
133
50
13
25
0
0 13
1 50
30
50 10K
13
50
13 10K
20 37
15 25
5
0
10
0
10
25
0
0
0
10
10
15
13
0
10
-6
Min Max
110
153
60
15
30
0
0 13
1 50
40
60 10K
15
60
15 10K
20 45
15 30
5
0
10
0
10
30
0
0
0
10
10
15
15
0
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6
2
4
10
13
13
8
8
16
9,19
9,19


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Featured Datasheets

Part NumberDescriptionMFRS
KM416C4000BThe function is 4M x 16bit CMOS Dynamic RAM with Fast Page Mode. Samsung semiconductorSamsung semiconductor
KM416C4000CThe function is 4M x 16bit CMOS Dynamic RAM with Fast Page Mode. Samsung semiconductorSamsung semiconductor

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