|
|
PDF KM416C4104C Data sheet ( Hoja de datos )
| Número de pieza | KM416C4104C | |
| Descripción | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de KM416C4104C (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
KM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family
is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM416C4004C(5.0V, 8K Ref.)
- KM416C4104C(5.0V, 4K Ref.)
• Active Power Dissipation
Speed
-5
-6
8K
495
440
Unit : mW
4K
660
605
• Refresh Cycles
Part Refresh
NO. cycle
KM416C4004C*
KM416C4104C
8K
4K
Refresh time
Normal
64ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
• Performance Range
Speed tRAC
tCAC
-5 50ns 13ns
-6 60ns 15ns
tRC
84ns
104ns
tHPC
20ns
25ns
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
1 page  
KM416C4004C, KM416C4104C
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Symbol
CIN1
CIN2
CDQ
Min
-
-
-
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=5.0V±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tCEZ
tOLZ
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
tDS
84
116
50
13
25
3
3 13
3
1 50
30
50 10K
13
38
8 10K
20 37
15 25
5
0
10
0
8
25
0
0
0
10
10
13
8
0
-6
Min Max
104
138
60
15
30
3
3 13
3
1 50
40
60 10K
15
45
10 10K
20 45
15 30
5
0
10
0
10
30
0
0
0
10
10
15
10
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6,21
3
2
4
10
13
13
8
8
16
9,19
5 Page 
KM416C4004C, KM416C4104C
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRAS
tRC
tCRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRCS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tAA
tRAC
OPEN
tOEA
tCAC
tCLZ
tOLZ
OPEN
CMOS DRAM
tRP
tRPC
tRRH
tRCH
tCEZ
tOEZ
DATA-OUT
Don′t care
Undefined
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet KM416C4104C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |