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PDF KSB1022 Data sheet ( Hoja de datos )
| Número de pieza | KSB1022 | |
| Descripción | High Power Switching Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSB1022
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1417
1 TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transisto
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 60
- 60
-5
-7
- 10
- 0.7
2
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
IC = - 50mA, IB = 0
VCB = - 60V, IE = 0
VEB = - 5V, IC = 0
VCE = - 3V, IC = - 3A
VCE = - 3V, IC = - 7A
IC = - 3A, IB = - 6mA
IC = - 7A, IB = - 14mA
IC = - 3A, IB = - 6mA
VCC = - 45V, IC = - 3A
IB1 = - IB2 = - 6mA
RL = 15Ω
Min.
- 60
2000
1000
Typ.
Max.
- 100
-4
15000
Units
V
µA
mA
- 0.95
- 1.3
- 1.55
0.8
2
2.5
- 1.5
-2
- 2.5
V
V
V
µs
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSB1022.PDF ] | |
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