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PDF KSB810 Data sheet ( Hoja de datos )
| Número de pieza | KSB810 | |
| Descripción | Audio Frequency Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Audio Frequency Amplifier
• Complement to KSD1020
KSB810
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty cycle≤50%
Ratings
-30
-25
-5.0
-700
-1.0
350
150
-55 ~ 150
Units
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VBE (on) * Base-Emitter on Voltage
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
* Pulse Test: PW≤350µs, Duty cycle≤2%
VCB= -30V, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -700mA
VCE= -6V, IC= -10mA
IC= -700mA, IB= -70mA
IC= -700mA, IB= -70mA
VCB= -6V, IE=0, f=1MHz
VCE= -6V, IC=-10mA
Min.
70
35
-600
50
Typ.
200
100
-640
-0.25
-0.95
17
160
Max.
-100
-100
400
-700
-0.4
-1.2
40
Units
nA
nA
mV
V
V
pF
MHz
hFE Classification
Classification
hFE1
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSB810.PDF ] | |
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