(PDF) KSE340 Datasheet - High Voltage General Purpose Applications

Número de pieza	KSE340
Descripción	High Voltage General Purpose Applications
Fabricantes	Fairchild Semiconductor
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No Preview Available ! KSE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE350 1 TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain IC = 1mA, IB = 0 VCB = 300V, IE =0 VBE = 3V, IC = 0 VCE = 10V, IC = 50mA Value 300 300 5 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Min. 300 30 Max. 100 100 240 Units V µA µA ©2000 Fairchild Semiconductor International Rev. A1, December 2000 1 page

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PDF KSE340 Data sheet ( Hoja de datos )