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PDF KST06 Data sheet ( Hoja de datos )
| Número de pieza | KST06 | |
| Descripción | Driver Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST05/06
Driver Transistor
• Collector-Emitter Voltage: VCEO = KST05: 60V
KST06: 80V
• Collector Power Dissipation: PC (max) = 350mW
• Complement to KST55/56
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collecto-Base Voltage
: KST05
: KST06
VCEO
Collector-Emitter Voltage
: KST05
: KST06
VEBO
IC
PC
TSTG
RTH(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Value
60
80
60
80
4
500
350
150
357
Units
V
V
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
IC=1mA, IB=0
BVEBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST05
: KST06
IE=100µA, IC=0
VCB=60V, IE=0
VCB=80V, IE=0
ICEO
hFE
Collector Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (on) Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
VCE=60V, IB=0
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=2V, IC=100mA, f=100MHz
Marking Code
Type
Mark
KST05
1H
KST06
1G
Min.
60
80
4
50
50
100
Max. Units
V
V
V
0.1 µA
0.1 µA
0.1 µA
0.25 V
1.2 V
MHz
Marking
1H
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KST06.PDF ] | |
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