KST4123 Datasheet PDF - Fairchild Semiconductor
| Part Number | KST4123 | |
| Description | General Purpose Transistor | |
| Manufacturers | Fairchild Semiconductor | |
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KST4123
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
RTH(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Value
40
30
5
200
350
150
357
Units
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
BVCBO
Collector-Base Breakdown Voltage
IC=10µA, IE=0
40 V
BVCEO
* Collector-Emitter Breakdown Voltage IC=1mA, IE=0
30 V
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
5V
ICBO
Collector Cut-off Current
VCB=20V, IE=0
50 nA
IEBO
Emitter Cut-off Current
VEB=3V, IC=0
50 nA
hFE * DC Current Gain
VCE=1V, IC=2mA
VCE=1V, IC=50mA
50 150
25
VCE (sat) * Collector-Emitter Saturation Voltage IC=50mA, IB=5mA
0.3 V
VBE (sat) * Base-Emitter Saturation Voltage
IC=50mA, IB=5mA
0.95 V
fT
Current Gain Bandwidth Product
VCE=20V, IC=10mA, f=100MHz
250
MHz
Cib Input Capacitance
VBE=0.5V, IC=0, f=100KHz
8 pF
Cob Output Capacitance
VCB=5V, IE=0, f=100KHz
4 pF
NF Noise Figure
VCE=5V, IC=100µA, RS=1KΩ
Noise Bandwidth=10Hz to 15.7KHz
6 dB
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
5B
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KST4123 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ KST4123.PDF Datasheet ] | |
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