Datasheet.kr   

ISL9N2357D3ST 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 ISL9N2357D3ST은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 ISL9N2357D3ST 자료 제공

부품번호 ISL9N2357D3ST 기능
기능 30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


ISL9N2357D3ST 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 9 페이지수

미리보기를 사용할 수 없습니다

ISL9N2357D3ST 데이터시트, 핀배열, 회로
Data Sheet
ISL9N2357D3ST
June 2002
30V, 0.007 Ohm, 35A, N-Channel
UltraFET® Trench Power MOSFET
UltraFET® Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on-
resistance per silicon area while maintaining fast switching
and low gate charge. The reduced conduction and switching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.
Packaging
ISL9N2357D3ST
JEDEC TO-252AA
DRAIN (FLANGE)
UltraFET® Trench
Features
• rDS(ON) = 0.006Typical, VGS = 10V
• Qg Total 85nC Typical, VGS = 10V
• Qgd 16nC Typical
• CISS 5600pF Typical
Symbol
D
G
GATE
SOURCE
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N2357D3ST
TO-252AA
N2357D
NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N2357D3ST
UNITS
VDSS
Drain to Source Voltage (Note 1)
30 V
VDGR
Drain to Gate Voltage (RGS = 20k) (Note 1)
30 V
VGS Gate to Source Voltage
±20 V
Drain Current
ID
ID
Continuous
Continuous
(TC
(TC
=
=
1205o0CoC, V, VGGSS==101V0V) )(Figure
2)
IDM Pulsed Drain Current
35
35
Figure 4
A
A
A
PD Power Dissipation
Derate Above 25oC
100
0.67
W
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300 oC
260 oC
THERMAL SPECIFICATIONS
RθJC
RθJA
Thermal Resistance Junction to Case, TO-252
Thermal Resistance Junction to Ambient TO-252
1.5 oC/W
100 oC/W
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1




ISL9N2357D3ST pdf, 반도체, 판매, 대치품
ISL9N2357D3ST
Typical Performance Curves (Continued)
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
40 TJ = 175oC
80
VGS = 10V
60
VGS = 7V
VGS = 6V
40
VGS = 5V
20
0
2
TJ = 25oC
34
TJ = -55oC
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
6
20
0
0
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
.5 1 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2
FIGURE 6. SATURATION CHARACTERISTICS
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
VGS = 10V, ID = 20A
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
1.0
10000
CISS = CGS + CGD
COSS CDS + CGD
1000
CRSS = CGD
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
VGS = 0V, f = 1MHz
100
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1

4페이지










ISL9N2357D3ST 전자부품, 판매, 대치품
ISL9N2357D3ST
SABER Electrical Model
REV Aug 2000
template ISL9N2357 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 1.01e-12, rs = 3.5e-3, ikf=15, trs1 = 1.01e-3, trs2 = 1.21e-6, cjo = 6.8e-10, tt = 6.7e-9, m = 0.35)
dp..model dbreakmod = (rs = 0.068, trs1 = 1.12e-3, trs2 = 1.25e-6)
dp..model dplcapmod = (cjo = 8.5e-10, isl = 10e-30, nl=10, m = 0..31)
m..model mmedmod = (type=_n, vto = 3.5, kp = 6.0, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 4.1, kp = 110, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 3.0, kp = 0.03, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.0, voff = -1.5)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -1.5, voff = -6.0)
DPLCAP 5
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.7, voff = 0)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0, voff = -0.7)
10
RSLC1
c.ca n12 n8 = 2.5e-9
c.cb n15 n14 = 2.1e-9
RSLC2
51
c.cin n6 n8 = 5.5e-9
ISCL
LDRAIN
DRAIN
2
RLDRAIN
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 4.3e-9
l.lsource n3 n7 = 1.6e-9
GATE
1
-
ESG
6
8
+
LGATE
EVTEMP
RGATE + 18 -
9 20 22
RLGATE
6
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
DBREAK
11
MWEAK
MMED
MSTRO
8
EBREAK
+
17
18
-
7
RSOURCE
DBODY
LSOURCE
SOURCE
3
RLSOURCE
res.rbreak n17 n18 = 1, tc1 = 1.01e-3, tc2 = 1.07e-7
res.rdrain n50 n16 = 2.8e-3, tc1 = 4.5e-3, tc2 = 8.0e-6
res.rgate n9 n20 = 1.68
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 43
res.rlsource n3 n7 = 16
res.rslc1 n5 n51= 1e-6, tc1 = 1.02e-4, tc2 = -1.13e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.8e-3, tc1 = 1.0e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -4.0e-3, tc2 = 1.25e-6
res.rvthres n22 n8 = 1, tc1 = -3.0e-3, tc2 = -1.5e-5
S1A
12 13
8
S2A
14 15
13
S1B S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RBREAK
17 18
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 33.39
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/550))** 3))
}
}
©2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1

7페이지


구       성 총 9 페이지수
다운로드[ ISL9N2357D3ST.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
ISL9N2357D3ST

30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵