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PDF ISL9N308AD3ST Data sheet ( Hoja de datos )
| Número de pieza | ISL9N308AD3ST | |
| Descripción | N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power MOSFETs
30V, 50A, 8mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.0064Ω (Typ), VGS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
• Qg (Typ) = 24nC, VGS = 5V
Applications
• DC/DC converters
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) Note 1
Continuous (TC = 100oC, VGS = 4.5V) Note 1
Continuous (TC = 25oC, VGS = 10V, RθJC = 52oC/W)
Pulsed
PD
TJ, TSTG
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
30
±20
50
48
14
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-252, TO-251
1.5 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, TO-251
100 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Package Marking and Ordering Information
Device Marking
N308AD
N308AD
Device
ISL9N308AD3ST
ISL9N308AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C
1 page  
Typical Characteristic (Continued) TC = 25°C unless otherwise noted
4000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
10
VDD = 15V
8
6
4
VGS = 0V, f = 1MHz
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 48A
ID = 14A
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
250
VGS = 4.5V, VDD = 15V, ID = 14A
200
150
100
50
tr
td(OFF)
tf
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
350
VGS = 10V, VDD = 15V, ID = 14A
300
250
td(OFF)
200
150
100
50
0
0
tf
tr
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(ON)
50
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
ISL9N308AD3 / ISL9N308AD3ST Rev C
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
FACT Quiet Series™
FAST®
FASTr™
MICROWIRE™
OPTOLOGIC®
OPTOPLANAR™
SMART START™
SPM™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7
11 Page | ||
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