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PDF ISL9N308AS3ST Data sheet ( Hoja de datos )
| Número de pieza | ISL9N308AS3ST | |
| Descripción | N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 8m | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2002
PWM Optimized
ISL9N308AP3/ISL9N308AS3ST
N-Channel Logic Level UltraFET® Trench MOSFETs
30V, 75A, 8mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
DRAIN
(FLANGE)
Features
• Fast switching
• rDS(ON) = 0.0064Ω (Typ), VGS = 10V
• rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
• Qg (Typ) = 24nC, VGS = 5V
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
SOURCE
DRAIN
GATE
D
GATE
SOURCE
TO-263AB
DRAIN
(FLANGE)
TO-220AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJC = 43oC/W)
Pulsed
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
N308AS
N308AP
Device
ISL9N308AS3ST
ISL9N308AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
G
S
Ratings
30
±20
75
48
15
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
1.5 oC/W
62 oC/W
43 oC/W
Tape Width
24mm
N/A
Quantity
800 units
50
©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
1 page  
Typical Characteristic (Continued)
4000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
10
VDD = 15V
8
6
4
VGS = 0V, f = 1MHz
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 48A
ID = 14A
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
250
VGS = 4.5V, VDD = 15V, ID = 15A
200
150
100
50
tr
td(OFF)
tf
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
350
VGS = 10V, VDD = 15V, ID = 15A
300
250
td(OFF)
200
150
100
50
0
0
tf
tr
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(ON)
50
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST ®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench ®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET ®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
11 Page | ||
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