ISL9N322AS3ST Datasheet PDF - Fairchild Semiconductor
| Part Number | ISL9N322AS3ST | |
| Description | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
| Manufacturers | Fairchild Semiconductor | |
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January 2002
ISL9N322AP3/ISL9N322AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.018Ω (Typ), VGS = 10V
• rDS(ON) = 0.028Ω (Typ), VGS = 4.5V
• Qg (Typ) = 9nC, VGS = 5V
• Qgd (Typ) = 3nC
• CISS (Typ) = 970pF
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
GATE
SOURCE
TO-263AB
DRAIN
(FLANGE)
TO-220AB
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
G
S
Ratings
30
±20
35
20
9
Figure 4
50
0.33
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-220, TO-263
3 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263
62 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
oC/W
Package Marking and Ordering Information
Device Marking
N322AS
N322AP
Device
ISL9N322AS3ST
ISL9N322AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
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Typical Characteristic (Continued)
2000
1000
CISS = CGS + CGD
COSS ≅ CGS + CGD
10
VDD = 15V
8
6
CRSS = CGD
100
VGS = 0V, f = 1MHz
50
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 35A
ID = 20A
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
100
VGS = 4.5V, VDD = 15V, ID = 9A
80
60
150
VGS = 10V, VDD = 15V, ID = 9A
tr
tf 100
td(OFF)
40
td(OFF)
20 td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
tf
50
tr
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
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