Datasheet.kr   

ISL9R18120P2 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 ISL9R18120P2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 ISL9R18120P2 자료 제공

부품번호 ISL9R18120P2 기능
기능 18A/ 1200V Stealth Diode
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


ISL9R18120P2 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

ISL9R18120P2 데이터시트, 핀배열, 회로
May 2002
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S
18A, 1200V Stealth™ Diode
General Description
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are
Stealth™ diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)) and
exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49414.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
2 LEAD TO-247
ANODE
CATHODE
JEDEC TO-220AC
JEDEC TO-263AB
ANODE
CATHODE
CATHODE
(FLANGE)
K
N/C
CATHODE
(BOTTOM SIDE
METAL)
CATHODE
(FLANGE)
ANODE
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 92oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
1200
1200
1200
18
36
200
125
20
-55 to 150
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A




ISL9R18120P2 pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
10
9 IF = 30A
8
VR = 780V, TC = 125oC
7
IF = 15A
6
5 IF = 7.5A
4
3
200
400
600
800
1000
1200
1400
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt
1200
1000
f = 1MHZ
800
600
400
200
0
0.01
0.1
1
10 100
VR, REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse
Voltage
3600
VR = 780V, TC = 125oC
3200
2800
IF = 30A
2400
2000
IF = 15A
1600
1200
IF = 7.5A
800
200
400
600
800
1000
1200
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
1400
Figure 8. Reverse Recovered Charge vs dIF/dt
-8.5
IF = 18A, VR = 780V, dIF /dt = 300A/µs
-9.0
IRM(REC)
-9.5
400
380
360
-10.0
340
-10.5
320
-11.0
300
-11.5
-12.0
tRR
280
260
-12.5
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
240
150
Figure 10. Reverse Recovery Current and Times
vs Case Temperature
20
15
10
5
0
80 90 100 110 120 130 140 150
TC, CASE TEMPERATURE (oC)
Figure 11. DC Current Derating Curve
©2002 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A

4페이지












구       성 총 6 페이지수
다운로드[ ISL9R18120P2.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
ISL9R18120P2

18A/ 1200V Stealth Diode

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵