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ISL9V2040D3S 데이터시트 PDF




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부품번호 ISL9V2040D3S 기능
기능 N-Channel Ignition IGBT
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ISL9V2040D3S 데이터시트, 핀배열, 회로
October 20
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARKŠ 200mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
EcoSPARKŠ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49444
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D - Pak package available
• SCIS Energy = 200mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-252AA JEDEC TO-263AB
D-Pak
D²-Pak
GG
EE
Symbol
JEDEC TO-220AB
E
C
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 11.5A, L = 3.0mHy
At Starting TJ = 150°C, ISCIS = 8.9A, L = 3.0mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
200
120
10
10
±10
130
0.87
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20




ISL9V2040D3S pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
20
VGE = 8.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
10
5
TJ = 175°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
15.0
12.5
VGE = 4.0V
10.0
7.5
5.0
2.5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10 VCES = 300V
1
VCES = 250V
0.1
-50 -25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
30
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
25
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
1.0 2.0 3.0 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
5.0
2.4
VCE = VGE
2.2 ICE = 1mA
2.0
1.8
1.6
1.4
1.2
-50 -25
0
25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
10
ICE = 6.5A, VGE = 5V, RG = 1K
Inductive tOFF
8
6
Resistive tOFF
4
Resistive tON
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20

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ISL9V2040D3S 전자부품, 판매, 대치품
SPICE Thermal Model
REV 25 April 2002
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2
CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1
SABER Thermal Model
SABER thermal model
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm3 5 4 = 8.8e -3
ctherm.ctherm4 4 3 = 3.9e -1
ctherm.ctherm5 3 2 = 3.6e -1
ctherm.ctherm6 2 tl = 1.9e -1
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm3 5 4 = 1.7e -1
rtherm.rtherm4 4 3 = 1.2e -1
rtherm.rtherm5 3 2 = 1.3e -1
rtherm.rtherm6 2 tl = 2.5e -1
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20

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관련 데이터시트

부품번호상세설명 및 기능제조사
ISL9V2040D3S

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V2040D3S

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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