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PDF ISL9V3036P3 Data sheet ( Hoja de datos )
| Número de pieza | ISL9V3036P3 | |
| Descripción | EcoSPARKTM 300mJ/ 360V/ N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²-
Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Package
JEDEC TO-252AA JEDEC TO-263AB
D-Pak
D²-Pak
GG
EE
Symbol
JEDEC TO-220AB
E
C
G
GATE
COLLECTOR
R1
R2
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
Device Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Ratings
360
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2002 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
1 page  
Typical Performance Curves (Continued)
1600
FREQUENCY = 1 MHz
1200
800
CIES
CRES
400
COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0 4 8 12 16 20 24 28 32
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
375
ICER = 10mA
370
365
360
355
350
345
340
335
10
100
TJ = - 40°C
TJ = 25°C
TJ = 175°C
1K
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Breakdown Voltage vs Series Gate Resistance
10K
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
PD
t2
0.01
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ISL9V3036P3.PDF ] | |
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